Mitsubishi Electric Announces Sale of 7.2V High Power MOSFET for Commercial Radios

Tokyo, December 4, 2008 - Mitsubishi Electric Corporation (President and CEO: Setsuhiro Shimomura) announced today it will begin sample shipments of a 7.2V high-power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for power amplifiers in commercial radios on December 8, 2008. The MOSFET has an industry top-level drain efficiency(1) of 67 percent at 527MHz, as well as a wide guaranteed operation range of 450-527MHz, an industry first.

(1): Rate of electricity converted to high-frequency waves by amplifiers

Summary of Sale
Model: RD07MUS2B
Price of sample (Excl. tax): US$3.5
Shipment date: Dec. 8, 2008
Production: 3 million pieces/year

Aim of Sale
Commercial radios are widely used by public service authorities such as police and fire departments, as well as in the private sector in such places as airports, event venues and taxis. Highly efficient MOSFETs to be used in power amplifiers for these radios, are in demand to make radio batteries last longer. With more commercial radios becoming used in multi-channels, MOSFETs are also required to operate at a wider range of frequency bands, compared to the previous 527MHz-single band operation. In addition, there is demand for a higher tolerance to electrostatic surges resulting from static electricity in winter. Mitsubishi Electric's new MOSFET meets all these demands.

Product Features

•1) Industry top-level efficiency, guaranteed operation at a wide frequency band of 450-527MHz, an industry first
By optimizing the MOSFET structure, Mitsubishi Electric has achieved the industry top-level drain efficiency of 67 percent at 527MHz, which is higher than the 50 percent-efficiency of the company's previous model, the RD07MVS1.

In addition, the 50-percent drain efficiency guaranteed in Mitsubishi Electric's previous model did not cover frequency bands outside 527MHz, but the new RD07MUS2B guarantees a drain efficiency of 58 percent and higher at a wide frequency band of 450-527MHz, an industry first.

This accomplishment will contribute to the production of multi-channel radios, and longer lasting radio batteries.

•2) Higher tolerance to electrostatic surge, an industry top-level feature
The built-in gate protection diode helped achieve an industry top-level surge tolerance of 5 kilovolts and higher for gate sources, and 3 kilovolts and higher for drain sources. This improvement makes anti-electrostatic measures simple.

For the Environment
The model is compliant with Restriction of the use of certain Hazardous Substances in electrical and electronic equipment (RoHS).

Product Inquiries
High Frequency Devices Marketing Section
Mitsubishi Electric Corporation
Tel +81-3-3218-3014
Sato.Kazuhiko@aj.MitsubishiElectric.co.jp
http://www.mitsubishichips.com/

Contact person for the Nordic market:
Mitsubishi Electric Europe
Semiconductor Business Unit
Ditte Johnsson
Tel +46-8-625-10-37
ditte.johnsson@se.mee.com

Media Contact
Public Relations Division
Mitsubishi Electric Corporation
Tel: +81-3-3218-3380
prd.gnews@nk.MitsubishiElectric.co.jp
http://global.mitsubishielectric.com/news/

About Mitsubishi Electric
With over 80 years of experience in providing reliable, high-quality products to both corporate clients and general consumers all over the world, Mitsubishi Electric Corporation (TSE:6503) is a recognized world leader in the manufacture, marketing and sales of electrical and electronic equipment used in information processing and communications, space development and satellite communications, consumer electronics, industrial technology, energy, transportation and building equipment. The company recorded consolidated group sales of 4,049.8 billion yen (US$ 40.5 billion*) in the fiscal year ended March 31, 2008. For more information visit http://global.mitsubishielectric.com

*At an exchange rate of 100 yen to the US dollar, the rate given by the Tokyo Foreign Exchange Market on March 31, 2008

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