Join the ROHM Group at APEC 2015 as we showcase our latest power technologies and solutions in 5 key areas: Analog, Discrete, Motor Drivers, PMICs, and SiC.

Event date 15 March 2015 – 19 March 2015

Location Charlotte Convention Center (Booth 209), Charlotte, North Carolina

ROHM, a pioneer in SiC development, offers an expanded lineup of industry-leading SiC devices that provide breakthrough performance, from high voltage SiC MOSFETs and Schottky barrier diodes that provide ultra-low switching loss to a quasi-resonant AC/DC converter designed to drive SiC MOSFETs with high efficiency and low noise.

SiC MOSFETs for Ultra-High Voltage Pulse Generators -- Providing further miniaturization and greater performance in a variety of equipment

ROHM has recently announced the adoption of its SCT2080KE SiC MOSFET in new, ultra-high voltage pulse generators (SiC-Pulser Series) launched by Fukushima SiC Applied Engineering Inc. in November, 2014.

15 May 2015 14:00

SMART INDUSTRIES BY ANALOG POWER -- Exhibiting at TECHNO-FRONTIER 2015, ROHM Semiconductor to Reveal Several Key Devices that Make Reduced Size and Energy Usage of Industrial Equipment a Reality

ROHM Semiconductor will be exhibiting at TECHNO-FRONTIER 2015, which will be held at Makuhari Messe from 20 May. They will exhibit several products such as increasingly relevant SiC-loaded applications, as well as its world-first, mass-produced trench-structured SiC-MOSFET. Friday, 22 May, President of Fukushima SiC Applied Engineering Inc., Mr Yuji Kokubo, will present at a lunch session.

19 February 2015 14:00

ROHM’s Expanding Lineup of Power Devices

ROHM is taking advantage of technology cultivated in the consumer electronics sector to actively advance product development for industrial equipment. ROHM leads the industry in all aspects of SiC power devices, from research and development to mass production. In addition to SiC semiconductors, ROHM will continue to offer a complete lineup of power devices for the silicon semiconductor field.

30 January 2015 14:00

ROHM’s gate driver IC with built-in isolator optimal for SiC MOSFET, IGBT and power MOSFET

In recent years, attention is focused on power electronics mainly in the fields of industrial equipment, renewable energy and expanding widely in automotive-inverters. Under these circumstances, ROHM developed gate drivers with built-in isolator that can maximally utilize performances of SiC, IGBT and power MOSFET by built-in isolators inside the ICs.

Join the ROHM Group at APEC 2015 as we showcase our latest power technologies and solutions in 5 key areas: Analog, Discrete, Motor Drivers, PMICs, and SiC.

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SiC MOSFETs for Ultra-High Voltage Pulse Generators -- Providing further miniaturization and greater performance in a variety of equipment

SMART INDUSTRIES BY ANALOG POWER -- Exhibiting at TECHNO-FRONTIER 2015, ROHM Semiconductor to Reveal Several Key Devices that Make Reduced Size and Energy Usage of Industrial Equipment a Reality

ROHM’s Expanding Lineup of Power Devices

ROHM’s gate driver IC with built-in isolator optimal for SiC MOSFET, IGBT and power MOSFET