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The World’s First Trench-Type SiC MOSFET -- Significantly reduced ON resistance minimizes size and power consumption in high-power devices including industrial equipment

​​​ROHM has announced the development and mass production of an SiC MOSFET that adopts the world’s first trench structure. Compared to existing planar-type SiC MOSFETs, ON resistance is reduced by 50% in the same chip size, making it possible to significantly decrease power loss in a variety of equipment, from industrial inverters and power supplies to power conditioners for solar power systems.
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The World’s First Trench-Type SiC MOSFET -- Significantly reduced ON resistance minimizes size and power consumption in high-power devices including industrial equipment

​​​ROHM has announced the development and mass production of an SiC MOSFET that adopts the world’s first trench structure. Compared to existing planar-type SiC MOSFETs, ON resistance is reduced by 50% in the same chip size, making it possible to significantly decrease power loss in a variety of equipment, from industrial inverters and power supplies to power conditioners for solar power systems.